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UNISONIC TECHNOLOGIES CO.,LTD MJE13011
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED SWITCHING
FEATURES
* High voltage, high speed switching * High reliability
1
TO-220F
*Pb-free plating product number: MJE13011L
PIN CONFIGURATION
PIN NO. 1 2 3 PIN NAME BASE COLLECTOR EMITTER
ORDERING INFORMATION Order Number Normal Lead Free Plating MJE13011-TF3-T MJE13011L-TF3-T Package TO-220F Packing Tube
www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co.,LTD
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PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC = 25 )
SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB PD TJ TSTG RATINGS 450 400 400 7 10 3 80 +150 -40 ~ +150 UNIT V V V V A A W
ELECTRICAL SPECIFICATIONS (TC =25 , Unless Otherwise Specified.)
PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector-Emitter Saturation Voltage Base Emitter Saturation Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Switching Time SYMBOL VCBO VCEO VCEO (SUS) VEBO VCE (SAT) VBE (SAT) ICBO IEBO hFE tON tSTG tF TEST CONDITIONS ICBO=1mA ICEO=10mA IC=1A IEBO=0.1mA IC=4A, IB=0.8A VCBO=450V VEBO=7V IC=4A, VCE=5V IC=7.5A, IB1=-IB2=1.5A RL=20, Pw=20s, Duty 2% MIN 450 400 400 7 TYP MAX UNIT V V V V V V mA mA s s s
1.2 1.5 1.0 0.1 10 1.0 2.0 1.0
CLASSIFICATION of hFE
RANK RANGE A 10 ~ 16 B 15 ~ 21 C 20 ~ 26 D 25 ~ 31 E 30 ~ 36 F 35 ~ 40
THERMAL DATA
PARAMETER Thermal Resistance Junction to Case SYMBOL
JC
RATINGS 4
UNIT /W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MJE13011
SWITCHING TIME TEST CIRCUIT
NPN EPITAXIAL SILICON TRANSISTOR
RL=20
IB1 IB2
IB1 IB2
IC
0.9IC IC PW=20 s tON 0.1IC tSTG tF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
Collector Output Characteristics 14 12
Collector Current, IC (A)
NPN EPITAXIAL SILICON TRANSISTOR
DC Current Gain 300 200
DC Current Gain, hFE
T C=25
A 9 00 m 70 0 mA
VCE=5V
100 50 30 10 5 3 1 0.03 0.05 0.1 0.3 0.5 1 3 5 10 T C=120 25 -20 -40
10 8 6 4 2 0 0 2 4 6
5 00 mA
300mA 200mA IB =100mA
8
10
12
14
Collector Emitter Voltage, VCE (V)
Collector Current, I C (A)
Base and Collector Saturation Voltage Saturation Voltage, VCE (SAT), VBE (SAT) (V) 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.03 0.05 0.1 VCE(SAT) VBE(SAT) TC=25 IC=5IB Collector Current, IC (A) 30 TC=25 10 Single Pulse 5 3 1 0.5 0.3 0.1 0.05 0.03 1 3 5
Safe Operating Area
50
s 100 s 200 s 500 s
PW=1ms
0.3 0.5
1
3
5
10
10
30 50 100
300 500
Collector Current, IC (A)
Switching Time 3 tSTG
Switching Time (s)
Collector Emitter Voltage, VCE (V)
T C=25 I C=5IB1 =5IB2
1 0.5 0.3 tON tF
0.1 0.3
0.5
1
3
5
10
Collector Current, IC (A)
UTC assum es no responsibility for equipm ent failures that result from using products at values that exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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